P CHANNEL TRANSISTOR DEFINITION PDF

Designing with high-efficiency, low-power components helps extend battery life for a wide range of electronic devices. Original Assignee STMicroelectronics SRL SGS Thomson Microelectronics SRL Priority date (The priority date is an assumption and is not a legal conclusion. The post irradiation test requirements for MOSFETs are clearly defined in the controlling MIL-PRF-19500 slashsheets. Industrys best power density, smallest footprints and easy-to-drive low gate charge. Nexperia offers a broad portfolio of N- and P-channel power MOSFETs, ranging from 12 V to 100 V and available in a wide range of space-saving and efficient. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) ( en Inventor Valerio Cassio Claudio Brambilla Manlio Sergio Cereda Paolo Caprara Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Granted Application number EP97830428A Other languages German ( de)

P CHANNEL TRANSISTOR DEFINITION PDF

Google Patents Method for manufacturing a native MOS P-channel transistor with a process manufacturing non-volatile memoriesĭownload PDF Info Publication number EP0902466A1 EP0902466A1 EP97830428A EP97830428A EP0902466A1 EP 0902466 A1 EP0902466 A1 EP 0902466A1 EP 97830428 A EP97830428 A EP 97830428A EP 97830428 A EP97830428 A EP 97830428A EP 0902466 A1 EP0902466 A1 EP 0902466A1 Authority EP European Patent Office Prior art keywords mask masking matrix channel defining Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents EP0902466A1 - Method for manufacturing a native MOS P-channel transistor with a process manufacturing non-volatile memories EP0902466A1 - Method for manufacturing a native MOS P-channel transistor with a process manufacturing non-volatile memories

P channel transistor definition